SI1967DH-T1-GE3, Dual MOSFET, P Channel, 20 V, 20 V, 1.3 A, 1.3 A, 0.64 ohm
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- Код товара
- 8634804467
- Артикул
- SI1967DH-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 1.35mm
- Brand:
- Vishay Semiconductors
- Series:
- SI1
- Pin Count
- 6
Цена по запросу
(от 81 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Width | 1.35mm |
| Brand: | Vishay Semiconductors |
| Series: | SI1 |
| Pin Count | 6 |
| Fall Time: | 10 ns |
| Rise Time: | 27 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.5 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-363 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Part # Aliases: | SI1967DH-T1-BE3 SI1903DL-T1-GE3 |
| Transistor Type: | 2 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4 nC |
| Структура | P-Channel |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Power Dissipation (Pd) | 1.25W |
| Особенности | полевая сборка |
| Pd - Power Dissipation: | 1.25 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 1.25 W |
| Typical Gate Charge @ Vgs | 2.6 nC @ 8 V |
| Total Gate Charge (Qg@Vgs) | 4nC@8V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 12 ns |
| Input Capacitance (Ciss@Vds) | 110pF@10V |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 15 ns |
| Continuous Drain Current (Id) | 1.3A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 790 mΩ |
| Maximum Continuous Drain Current | 1.1 A |
| Rds On - Drain-Source Resistance: | 490 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 790mΩ@1.8V, 250mA |