SI1967DH-T1-E3, 20V 1.3A 490mOhm@4.5V,910mA 0.74W 400mV 2 P-Channel SOT-363 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044551931
- Артикул
- SI1967DH-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 131,27 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 1.3A 6-контактный SC-70 T/R
Технические параметры
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Dual |
| Product Category | Power MOSFET |
| Supplier Package | SC-70 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 27 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 740 |
| Typical Gate Charge @ Vgs (nC) | 2.6@8V|1.6@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 26 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.33 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate to Source Charge (nC) | 0.36 |
| Typical Reverse Recovery Time (ns) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 110@10V |
| Typical Reverse Recovery Charge (nC) | 15 |
| Maximum Drain Source Resistance (mOhm) | 490@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 3 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.74 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 16@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 220 |