SI1965DH-T1-GE3, 12V 1.3A 390mOhm@4.5V,1A 800mW 400mV 2 P-Channel SOT-363 MOSFETs ROHS
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- Код товара
- 8070073813
- Артикул
- SI1965DH-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Fall Time:
- 10 ns
- Rise Time:
- 27 ns
- Вес, г
- 1
Цена по запросу
(от 58,59 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Fall Time: | 10 ns |
| Rise Time: | 27 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | SOT-363-6 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 |
| Transistor Type: | 2 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.2 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1.25 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 1.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 390 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |