SI1317DL-T1-GE3, Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -6A; 0.3W; SC70
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- Код товара
- 8029433701
- Артикул
- SI1317DL-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SC70
- Brand:
- Vishay Semiconductors
- Series:
- SI1
- FET Type
- P-Channel
Цена по запросу
(от 57,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канал 20 В 1,4 А (Tc) 500 МВт (Tc) для поверxностного монтажа SC-70-3
Технические параметры
| Case | SC70 |
| Brand: | Vishay Semiconductors |
| Series: | SI1 |
| FET Type | P-Channel |
| Mounting | SMD |
| Vgs (Max) | ±8V |
| Fall Time: | 7 ns |
| Rise Time: | 20 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | TrenchFET |
| Вес, г | 0.1 |
| Gate charge | 6.5nC |
| Technology: | Si |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -1.4A |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SC-70, SOT-323 |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Part # Aliases: | SI1317DL-T1-BE3 SI1307EDL-T1-GE3 |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 0.3W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.3 nC |
| Type of transistor | P-MOSFET |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Структура | MOSFET |
| Gate-source voltage | ±8V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.15Ω |
| Drain-source voltage | -20V |
| Pulsed drain current | -6A |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -50°C ~ 150°C(TJ) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.4A, 4.5V |
| Особенности | - |
| Pd - Power Dissipation: | 280 mW |
| Power Dissipation (Max) | 500mW(Tc) |
| Supplier Device Package | SC-70-3 |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 12 ns |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Typical Turn-Off Delay Time: | 23 ns |
| Drain to Source Voltage (Vdss) | 20 V |
| Id - Continuous Drain Current: | 1.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -50 C |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 272 pF @ 10 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1.5V@250uA |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.4 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |