SI1317DL-T1-BE3, MOSFETs SOT323 P-CH 20V 1.4A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063904683
- Артикул
- SI1317DL-T1-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 7 ns
- Rise Time:
- 20 ns
- Вес, г
- 1
Цена по запросу
(от 63,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 7 ns |
| Rise Time: | 20 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | SOT-323-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI1317DL-T1-GE3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.3 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 280 mW |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 1.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -50 C |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |