SI1062X-T1-GE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070099263
- Артикул
- SI1062X-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SC89, SOT563
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 26,66 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 0,53A 3-контактный SC-89 T/R
Технические параметры
| Case | SC89, SOT563 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Technology | TrenchFET® |
| Вес, г | 0.01 |
| Gate charge | 2.7nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Package Type | SC-89 |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | 0.53A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | SC-89 |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 0.22W |
| Process Technology | TrenchFET |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±8V |
| On-state resistance | 762mΩ |
| Drain-source voltage | 20V |
| Pulsed drain current | 2A |
| Standard Package Name | SC |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 14 |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Power Dissipation (mW) | 220 |
| Typical Gate Charge @ Vgs (nC) | 1.8@8V|1@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 2 |
| Maximum Continuous Drain Current | 530 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.53 |
| Typical Input Capacitance @ Vds (pF) | 43@10V |
| Maximum Drain Source Resistance (mOhm) | 420@4.5V |
| Maximum Gate Source Leakage Current (nA) | 30000 |