N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3
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- Код товара
- 8619991102
- Артикул
- SI1032R-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SC75A
- PPAP
- No
- Width
- 0.86mm
- Mounting
- Surface Mount
Цена по запросу
(от 55,97 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный МОП-транзистор, от 8 В до 25 В, Vishay Semiconductor
Технические параметры
| Case | SC75A |
| PPAP | No |
| Width | 0.86mm |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.5 |
| Gate charge | 0.75nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Package Type | SC-75 |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | 0.14A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | SC-75A |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 0.13W |
| Process Technology | TrenchFET |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±6V |
| On-state resistance | 5Ω |
| Transistor Material | Si |
| Drain-source voltage | 20V |
| Pulsed drain current | -0.5A |
| Standard Package Name | SC |
| Typical Fall Time (ns) | 25(Max) |
| Typical Rise Time (ns) | 25(Max) |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 280 mW |
| Typical Gate Charge @ Vgs | 750 nC @ 4.5 V |
| Maximum Gate Source Voltage | -6 V, +6 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 250 |
| Minimum Gate Threshold Voltage | 0.4V |
| Typical Gate Charge @ Vgs (nC) | 0.75@4.5V |
| Maximum Drain Source Resistance | 9 Ω |
| Maximum Gate Source Voltage (V) | ±6 |
| Typical Turn-On Delay Time (ns) | 50(Max) |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 50(Max) |
| Features of semiconductor devices | ESD protected gate |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.14 |
| Maximum Drain Source Resistance (mOhm) | 5000@4.5V |
| Maximum Gate Source Leakage Current (nA) | 3000 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 5 Ом |