Транзисторная сборка FET, MOSFET SI1026X-T1-GE3
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- Код товара
- 8062671528
- Артикул
- SI1026X-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI1
- Tradename:
- TrenchFET
- Вес, г
- 1
Цена по запросу
(от 39 ₽)
Минимальный заказ: 1234 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Сборка из полевых транзисторов, 2N-канальный, 60 В, 305 мА
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI1 |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| Technology: | Si |
| Channel Type | N |
| Package Type | SOT-563F |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-89-6 |
| Part # Aliases: | SI1026X-GE3 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 600 pC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 280 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 20 ns |
| Id - Continuous Drain Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 200 mS |
| Maximum Continuous Drain Current | 305 mA |
| Rds On - Drain-Source Resistance: | 1.4 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |