SI1021R-T1-GE3, Транзистор: P-MOSFET; полевой; -60В; -0,19А; Idm: -0,65А; 0,13Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070132633
- Артикул
- SI1021R-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 220 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 60V 0,19A 3-контактный SC-75A T/R
Технические параметры
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | SC-75A |
| Maximum IDSS (uA) | 0.025 |
| Process Technology | TrenchFET |
| Standard Package Name | SC |
| Power Dissipation (Pd) | 250mW |
| Total Gate Charge (Qg@Vgs) | 1.7nC@15V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 23pF@25V |
| Continuous Drain Current (Id) | 190mA |
| Maximum Power Dissipation (mW) | 250 |
| Typical Gate Charge @ Vgs (nC) | 1.7@15V |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.19 |
| Typical Input Capacitance @ Vds (pF) | 23@25V |
| Maximum Drain Source Resistance (MOhm) | 4000@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |