SH8J65TB1, Транзистор: P-MOSFET x2
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070105196
- Артикул
- SH8J65TB1
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Вес, г
- 0.11
- Technology:
- Si
- Subcategory:
- MOSFETs
Цена по запросу
(от 190,73 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Вес, г | 0.11 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOP-8 |
| Part # Aliases: | SH8J65 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Id - Continuous Drain Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 6 S |
| Rds On - Drain-Source Resistance: | 31 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |