SGW25N120FKSA1, Trans IGBT Chip N-CH 1200V 46A 313W 3-Pin(3+Tab) TO-247 Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001355480
- Артикул
- SGW25N120FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- Infineon Technologies
Цена по запросу
(от 1 750 ₽)
Минимальный заказ: 54 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзисторы, диоды,управляемые ключи, сборки и модули TO-247 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 5.3 mm |
| Height | 20.95 mm |
| Length | 15.9 mm |
| Series | SGW25N120 |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | Si |
| Вес, г | 7.5 |
| PCB changed | 3 |
| Part Status | LTB |
| Unit Weight | 1.340411 oz |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | TO-247 |
| Rad Hardened | No |
| Configuration | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Part # Aliases | SGW25N120FKSA1 SP000012565 |
| Product Category | IGBT Transistors |
| Supplier Package | TO-247 |
| Factory Pack Quantity | 240 |
| Standard Package Name | TO-247 |
| Collector Current (DC) | 46(A) |
| Collector-Emitter Voltage | 1200(V) |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -55C |
| Maximum Gate Emitter Voltage | +/-20 V |
| Gate to Emitter Voltage (Max) | '±20(V) |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation (mW) | 313 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Continuous Collector Current Ic Max | 46 A |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Temperature Classification | Military |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 46 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Typical Collector Emitter Saturation Voltage (V) | 3.1 |