SFT1342-W, Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Bag
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002234011
- Артикул
- SFT1342-W
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 170 ₽)
Минимальный заказ: 180 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET P-CH 60V 12A с 3-контактным разъемом (3+ язычка) TP-пакет
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Bag |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 2.3 mm |
| Package Length | 6.5 mm |
| Product Category | Power MOSFET |
| Supplier Package | TP |
| Maximum IDSS (uA) | 1 |
| Структура | MOSFET |
| Standard Package Name | TO-251 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 75 |
| Typical Rise Time (ns) | 37 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Typical Gate Charge @ 10V (nC) | 26 |
| Typical Gate Charge @ Vgs (nC) | 26@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 115 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 3 |
| Typical Turn-Off Delay Time (ns) | 135 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.95 |
| Typical Gate to Drain Charge (nC) | 5 |
| Maximum Gate Threshold Voltage (V) | 2.6 |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Typical Gate to Source Charge (nC) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1150@20V |
| Maximum Drain-Source Resistance (mOhm) | 62@10V |
| Maximum Gate-Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 48 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 68@4V|62@4.5V|47@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 95@20V |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |