SCTW70N120G2V,Silicon Carbide MOSFET, Single, N Channel, 91 A, 1.2 kV, 0.021 ohm, HiP247
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- Код товара
- 8004507468
- Артикул
- SCTW70N120G2V
- Бренд
- STMicroelectronics
- Type
- Power MOSFET
- Brand:
- STMicroelectronics
- Mounting
- Through Hole
- Polarity
- N
Цена по запросу
(от 7 530 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH SiC 1,2 кВ 70А, 3-контактный (3 + язычка), трубка HIP-247
Технические параметры
| Type | Power MOSFET |
| Brand: | STMicroelectronics |
| Mounting | Through Hole |
| Polarity | N |
| Packaging | Rail/Tube |
| Pin Count | 3+Tab |
| Packaging: | Tube |
| Вес, г | 4.5 |
| Technology: | SiC |
| Channel Mode | Enhancement |
| Package Type | HIP-247 |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Package/Case: | HiP-247-3 |
| Product Type: | SiC MOSFETS |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Power Dissipation | 390(W) |
| Product Category: | SiC MOSFETs |
| Qg - Gate Charge: | 150 nC |
| Number of Elements | 1 |
| Number of Channels: | 1 Channel |
| Drain-Source On-Volt | 1200(V) |
| Operating Temp Range | -55C to 200C |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 600 |
| Pd - Power Dissipation: | 547 W |
| Continuous Drain Current | 70(A) |
| Gate-Source Voltage (Max) | 22(V) |
| Id - Continuous Drain Current: | 91 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Operating Temperature Classification | Military |
| Vgs th - Gate-Source Threshold Voltage: | 4.9 V |