SBCW66GLT1G, Bipolar Transistors - BJT SS GP XSTR NPN 45V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004739324
- Артикул
- SBCW66GLT1G
- Бренд
- ON Semiconductor***
- Type
- NPN
- Brand:
- onsemi
- EU RoHS
- Compliant
- Series:
- BCW66
Цена по запросу
(от 200 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type | NPN |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | BCW66 |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | onsemi |
| Package Width | 1.3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Height | 0.94 |
| Package Length | 2.9 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Collector Current (Ic) | 800mA |
| Power Dissipation (Pd) | 300mW |
| Minimum DC Current Gain | 50@100uA@10V|60@500mA@2V|160@100mA@1V|110@10mA@1V |
| Pd - Power Dissipation: | 225 mW |
| DC Current Gain hFE Max: | 400 at 100 mA, 1 VDC |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 160@100mA, 1V |
| Collector- Base Voltage VCBO: | 75 V |
| Maximum DC Collector Current: | 800 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 300 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 160 at 100 mA, 1 VDC |
| Collector Cut-Off Current (Icbo) | 20nA |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 75 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 700 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Maximum Base Emitter Saturation Voltage (V) | 2@50mA@500mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.7@50mA@500mA|0.3@10mA@100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 700mV@50mA, 500mA |