SBCP56T3G, Bipolar Transistors - BJT SS GP XSTR NPN 80V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005376121
- Артикул
- SBCP56T3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.11
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 340 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.11 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 4000 |
| Pd - Power Dissipation: | 1.5 W |
| DC Current Gain hFE Max: | 250 at 150 mA, 2 V |
| Gain Bandwidth Product fT: | 130 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 40 at 150 mA, 2 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 500 mV |