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SBC847CWT3G, Bipolar Transistors - BJT SS SC70 GP XSTR NPN 45V

SBC847CWT3G, Bipolar Transistors - BJT SS SC70 GP XSTR NPN 45V

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Код товара
8004739320
Артикул
SBC847CWT3G
Бренд
ON Semiconductor***
Grade
Automotive
Brand:
onsemi
Вес, г
0.01
Power - Max
150 mW
Цена по запросу
(от 10,54 ₽)

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Описание

Биполярные транзисторы - BJT SS SC70 GP XSTR NPN 45V

Технические параметры

GradeAutomotive
Brand:onsemi
Вес, г0.01
Power - Max150 mW
Technology:Si
Subcategory:Transistors
Manufacturer:onsemi
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
QualificationAEC-Q101
Configuration:Single
Package / CaseSC-70, SOT-323
Qualification:AEC-Q101
Mounting Style:SMD/SMT
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Operating Temperature-55°C ~ 150°C(TJ)
Factory Pack Quantity:10000
Frequency - Transition100MHz
Pd - Power Dissipation:200 mW
Supplier Device PackageSC-70-3(SOT323)
Gain Bandwidth Product fT:100 MHz
Emitter- Base Voltage VEBO:6 V
Collector- Base Voltage VCBO:50 V
Maximum DC Collector Current:100 mA
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector (Ic) (Max)100 mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Current - Collector Cutoff (Max)15nA(ICBO)
Collector- Emitter Voltage VCEO Max:45 V
Collector-Emitter Saturation Voltage:600 mV
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)45 V

Техническая документация