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SBC847CLT1G, Транзистор: NPN

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Код товара
8017548185
Артикул
SBC847CLT1G
Бренд
ON Semiconductor***
Type
NPN
Grade
Automotive
EU RoHS
Compliant
Material
Si
Цена по запросу
(от 38 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный транзистор, NPN, 45 В, 0.1 А

Технические параметры

TypeNPN
GradeAutomotive
EU RoHSCompliant
MaterialSi
MilitaryNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
Вес, г0.02
PCB changed3
Part StatusActive
Power - Max300 mW
КорпусSOT-23-3(TO-236)
ConfigurationSingle
Mounting TypeSurface Mount
Package Width1.3
QualificationAEC-Q101
Package / CaseTO-236-3, SC-59, SOT-23-3
Package Height0.94
Package Length2.9
Transistor TypeNPN
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Структураnpn
AEC Qualified NumberAEC-Q101
Operating Temperature-55°C ~ 150°C(TJ)
Standard Package NameSOT
Frequency - Transition100MHz
Minimum DC Current Gain420@2mA@5V
Supplier Device PackageSOT-23-3(TO-236)
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector (Ic) (Max)100 mA
Maximum Power Dissipation (mW)300
Current - Collector Cutoff (Max)15nA(ICBO)
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA
Voltage - Collector Emitter Breakdown (Max)45 V
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.5mA@10mA|0.6@5mA@100mA

Техническая документация