SBC846BDW1T1G, Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R
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- Код товара
- 8001344597
- Артикул
- SBC846BDW1T1G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.75
- Type
- NPN
- Brand:
- onsemi
- EU RoHS
- Compliant
Цена по запросу
(от 8 ₽)
Минимальный заказ: 6000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN x2, биполярный, 65В, 0,1А, 0,38Вт, SOT363 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| HTS | 8541.29.00.75 |
| Type | NPN |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | BC846B |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.07 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SC-88/SC70-6/SOT-363 |
| Configuration | Dual |
| Manufacturer: | onsemi |
| Package Width | 1.25 |
| Package/Case: | SOT-363-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Package Height | 0.9 |
| Package Length | 2 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-363 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 200@2mA@5V |
| Pd - Power Dissipation: | 380 mW |
| DC Current Gain hFE Max: | 450 |
| Gain Bandwidth Product fT: | 100 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 0.1 A |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 380 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 200 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | 600 mV |
| Maximum Collector-Emitter Voltage (V) | 65 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@0.5mA@10mA|0.6@5mA@100mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |