SBC807-40WT1G PNP Transistor, -500 mA, -45 V, 3-Pin SOT-323
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- Код товара
- 8014595294
- Артикул
- SBC807-40WT1G
- Бренд
- ON Semiconductor***
- Case
- SC70, SOT323
- Brand:
- onsemi
- Series:
- BC807-40W
- Category
- Bipolar Small Signal
Цена по запросу
(от 24,10 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
НА полупроводниковом биполярном транзисторе SBC807-40WT1G PNP, 0,5 А, 45 В, 3-контактный SC-70 | НА полупроводниковом SBC807-40WT1G
Технические параметры
| Case | SC70, SOT323 |
| Brand: | onsemi |
| Series: | BC807-40W |
| Category | Bipolar Small Signal |
| Mounting | Surface Mount |
| Frequency | 100(MHz) |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Вес, г | 1 |
| Application | automotive industry |
| Technology: | Si |
| Current gain | 250…600 |
| Manufacturer | ONSEMI |
| Output Power | Not Required(W) |
| Package Type | SOT-323(SC-70) |
| Polarisation | bipolar |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Корпус | sot-323 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| DC Current Gain | 250 |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-70-3 |
| Transistor Type | PNP |
| Collector current | 0.5A |
| Power Dissipation | 0.46(W) |
| Product Category: | Bipolar Transistors-BJT |
| Number of Elements | 1 |
| Type of transistor | PNP |
| Структура | pnp |
| Transistor Polarity | PNP |
| Emitter-Base Voltage | 5(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | PNP |
| Collector Current (DC) | 0.5(A) |
| Collector-Base Voltage | 50(V) |
| Pd - Power Dissipation: | 460 mW |
| DC Current Gain hFE Max: | 600 |
| Transistor Configuration | Single |
| Collector-Emitter Voltage | 45(V) |
| Maximum Power Dissipation | 460 mW |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | -500 mA |
| Maximum Emitter Base Voltage | -5 V |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -500 mA |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | -50 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 250 |
| Maximum Collector Emitter Voltage | -45 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Operating Temperature Classification | Military |
| Collector-Emitter Saturation Voltage: | 700 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |