RUM002N05T2L, Транзистор: N-MOSFET; полевой; 50В; 0,2А; Idm: 0,8А; 150мВт; SOT723
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070107200
- Артикул
- RUM002N05T2L
- Бренд
- Rohm
- Type
- 1PCSNChannel
- Brand
- ROHM Semiconductor
- Series
- RUM002N05
- Fall Time
- 55 ns
Цена по запросу
(от 21,90 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type | 1PCSNChannel |
| Brand | ROHM Semiconductor |
| Series | RUM002N05 |
| Fall Time | 55 ns |
| Packaging | Cut Tape or Reel |
| Rise Time | 6 ns |
| Technology | Si |
| Вес, г | 0.01 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Manufacturer | ROHM Semiconductor |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-723-3 |
| Part # Aliases | RUM002N05 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Number Of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 8000 |
| Pd - Power Dissipation | 150 mW |
| Power Dissipation (Pd) | 150mW |
| Vgs - Gate-Source Voltage | 4.5 V |
| Typical Turn-On Delay Time | 4 ns |
| Typical Turn-Off Delay Time | 15 ns |
| Input Capacitance (Ciss@Vds) | 25pF@10V |
| Continuous Drain Current (Id) | 200mA |
| Id - Continuous Drain Current | 200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 400 mS |
| Rds On - Drain-Source Resistance | 2.2 Ohms |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs Th - Gate-Source Threshold Voltage | 300 mV |