RU1C002ZPTCL, Транзистор: P-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015770227
- Артикул
- RU1C002ZPTCL
- Бренд
- Rohm
- RoHS
- Details
- Type
- Power MOSFET
- Brand
- ROHM Semiconductor
- Width
- 1.25 mm
Цена по запросу
(от 9,60 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
SOT-323-3 МОП-транзистора ROHS
Технические параметры
| RoHS | Details |
| Type | Power MOSFET |
| Brand | ROHM Semiconductor |
| Width | 1.25 mm |
| Height | 0.9 mm |
| Length | 2 mm |
| Series | RU1C002ZP |
| Product | MOSFET |
| Fall Time | 17 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 4 ns |
| Technology | Si |
| Вес, г | 0.1 |
| Unit Weight | 0.004395 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ROHM Semiconductor |
| Package Type | SOT-323 |
| Configuration | 1 P-Channel |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-323-3 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 1.4 nC |
| Number of Channels | 1 Channel |
| Структура | MOSFET |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 3000 |
| Forward Diode Voltage | 1.2V |
| Pd - Power Dissipation | 150 mW |
| Особенности | - |
| Maximum Power Dissipation | 150 mW |
| Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | +/-10 V |
| Typical Turn-On Delay Time | 6 ns |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 17 ns |
| Maximum Drain Source Voltage | 20 V |
| Id - Continuous Drain Current | -200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 200 mS |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Drain Source Resistance | 9.6 Ω |
| Maximum Continuous Drain Current | 200 mA |
| Rds On - Drain-Source Resistance | 9.6 Ohms |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vgs th - Gate-Source Threshold Voltage | -300 mV |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.15 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |