RS3L140GNGZETB, MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 14.0A(Id), (4.5V Drive)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063806633
- Артикул
- RS3L140GNGZETB
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 25 ns
- Rise Time:
- 18 ns
- Вес, г
- 1
Цена по запросу
(от 444,70 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 25 ns |
| Rise Time: | 18 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | SOP-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | RS3L140GN |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 58 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 14 ns |
| Typical Turn-Off Delay Time: | 67 ns |
| Id - Continuous Drain Current: | 14 A |
| Maximum Operating Temperature: | +150 C |
| Rds On - Drain-Source Resistance: | 6.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |