RS1L120GNTB, MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 12.0A(Id), (4.5V Drive)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006212024
- Артикул
- RS1L120GNTB
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 8 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 7 ns
Цена по запросу
(от 224,85 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 8 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 7 ns |
| Вес, г | 0.77 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | HSOP-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | RS1L120GN |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 26 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 3W |
| Особенности | - |
| Pd - Power Dissipation: | 27 W |
| Total Gate Charge (Qg@Vgs) | 26nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 16 ns |
| Input Capacitance (Ciss@Vds) | 1.33nF@30V |
| Typical Turn-Off Delay Time: | 40 ns |
| Continuous Drain Current (Id) | 12A;36A |
| Id - Continuous Drain Current: | 36 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 12.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |