RQ3P045ATTB1, P-канальный силовой MOSFET-транзистор; RQ3P045ATTB1@ROHM
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 9001833677
- Артикул
- RQ3P045ATTB1
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 90 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 15 ns
Цена по запросу
(от 379 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Mosfet, P-Ch, 100 В, 14,5А, Hsmt, соответствует требованиям Rohs: Да |Rohm RQ3P045ATTB1
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 90 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 15 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | HSMT-8 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 49 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 20 W |
| Vgs - Gate-Source Voltage: | 20 V |
| Typical Turn-On Delay Time: | 13 ns |
| Typical Turn-Off Delay Time: | 170 ns |
| Id - Continuous Drain Current: | 14.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 8 S |
| Rds On - Drain-Source Resistance: | 92 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |