RQ3L050GNTB, Транзистор: N-MOSFET
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- Код товара
- 8062084981
- Артикул
- RQ3L050GNTB
- Бренд
- Rohm
- RoHS
- Details
- Brand
- ROHM Semiconductor
- Brand:
- ROHM Semiconductor
- Fall Time
- 3.7 ns
Цена по запросу
(от 108,33 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N-канальный, 60 В, 12 А, HSMT-8; Полярность транзистора: N-канальный; Постоянный ток стока Id: 12 А; Напряжение источника стока Vds: 60 В; Сопротивление включения Rds(on): 0,061 Ом; Тестовое напряжение Rds(on) Vgs:10 В; Пороговое напряжение Vgs:2,5 В; Сила
Технические параметры
| RoHS | Details |
| Brand | ROHM Semiconductor |
| Brand: | ROHM Semiconductor |
| Fall Time | 3.7 ns |
| Packaging | Reel |
| Rise Time | 4.9 ns |
| Fall Time: | 3.7 ns |
| Rise Time: | 4.9 ns |
| Technology | Si |
| Вес, г | 0.01 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | ROHM Semiconductor |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 1 N-Channel |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | HSMT-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | HSMT-8 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | RQ3L050GN |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 5.3 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 5.3 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 14.8 W |
| Pd - Power Dissipation: | 14.8 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 7.4 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 17.4 ns |
| Typical Turn-On Delay Time: | 7.4 ns |
| Typical Turn-Off Delay Time: | 17.4 ns |
| Id - Continuous Drain Current | 12 A |
| Maximum Operating Temperature | +150 C |
| Forward Transconductance - Min | 3.5 S |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 3.5 S |
| Rds On - Drain-Source Resistance | 43 mOhms |
| Rds On - Drain-Source Resistance: | 43 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |