RJK6006DPP-A0#T2, MOSFETs POWER TRS1 HV-MOS TO220FP MOS AP5H POWER
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064116755
- Артикул
- RJK6006DPP-A0#T2
- Бренд
- Renesas Technology
- Brand:
- Renesas Electronics
- Fall Time:
- 10 ns
- Packaging:
- Tray
- Rise Time:
- 17 ns
Цена по запросу
(от 569,48 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Renesas Electronics |
| Fall Time: | 10 ns |
| Packaging: | Tray |
| Rise Time: | 17 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Renesas Electronics |
| Package/Case: | TO-220FP-3 |
| Product Type: | MOSFETs |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 19 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 25 |
| Pd - Power Dissipation: | 29 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 25 ns |
| Typical Turn-Off Delay Time: | 60 ns |
| Id - Continuous Drain Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |