Моя заявка (0)
RHP020N06T100, Транзистор: N-MOSFET

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8015759875
Артикул
RHP020N06T100
Бренд
Rohm
ECCN
EAR99
HTSUS
8541.21.0095
Width
2.7mm
Package
Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 90 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

N-канальный 60В 2А (Ta) 500 МВт (Ta) для поверxностного монтажа MPT3

Технические параметры

ECCNEAR99
HTSUS8541.21.0095
Width2.7mm
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
FET TypeN-Channel
Pin Count3
Vgs (Max)В±20V
TechnologyMOSFET (Metal Oxide)
Вес, г0.1
RoHS StatusROHS3 Compliant
Channel ModeEnhancement
Channel TypeN
Package TypeSOT-89
REACH StatusREACH Affected
Mounting TypeSurface Mount
Package / CaseTO-243AA
Simulation Modelshttp://rohmfs.rohm.com/en/products/library/spice/d
Vgs(th) (Max) @ Id2.5V @ 1mA
СтруктураMOSFET
Base Product NumberRHP020 ->
Forward Diode Voltage1.2V
Operating Temperature150В°C (TJ)
Rds On (Max) @ Id, Vgs200mOhm @ 2A, 10V
Особенности-
Other Related Documentshttp://rohmfs.rohm.com/en/techdata_basic/transisto
Power Dissipation (Max)500mW (Ta)
Supplier Device PackageMPT3
Transistor ConfigurationSingle
Maximum Power Dissipation500 mW
Typical Gate Charge @ Vgs7 nC @ 10 V
Maximum Gate Source Voltage±20 V
Number of Elements per Chip1
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Maximum Drain Source Voltage60 V
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Drain to Source Voltage (Vdss)60V
Maximum Gate Threshold Voltage2.5V
Minimum Gate Threshold Voltage1V
Maximum Drain Source Resistance340 mΩ
Maximum Continuous Drain Current2 A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds140pF @ 10V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25В°C2A (Ta)
Максимальное напряжение затвор-исток Uзи макс.,В±20В

Техническая документация