RGW00TS65DHRC11 Single IGBT, 50 A 650 V, 3-Pin TO-247N, Through Hole
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014579451
- Артикул
- RGW00TS65DHRC11
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Pin Count
- 3
- Packaging:
- Tube
- Вес, г
- 1
Цена по запросу
(от 2 930 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Преобразователи IGBT серии ROHM RGW field stop trench подxодят для автомобильной промышленности, бортовыx компьютеров, преобразователей постоянного тока в постоянный, PFC, промышленныx инверторов.
Технические параметры
| Brand: | ROHM Semiconductor |
| Pin Count | 3 |
| Packaging: | Tube |
| Вес, г | 1 |
| Technology: | Si |
| Channel Type | N |
| Package Type | TO-247N |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | ROHM Semiconductor |
| Mounting Type | Through Hole |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247N-3 |
| Part # Aliases: | RGW00TS65DHR |
| Product Category: | IGBT Transistors |
| Number of Transistors | 1 |
| Pd - Power Dissipation: | 254 W |
| Transistor Configuration | Common Emitter |
| Maximum Power Dissipation | 254 W |
| Maximum Gate Emitter Voltage | ±30V |
| Gate-Emitter Leakage Current: | 200 nA |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Collector Emitter Voltage | 650 V |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Continuous Collector Current Ic Max: | 200 A |
| Maximum Continuous Collector Current | 50 A |
| Collector-Emitter Saturation Voltage: | 1.9 V |
| Continuous Collector Current at 25 C: | 96 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |