RFD16N05LSM9A, MOSFETs Power MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004835930
- Артикул
- RFD16N05LSM9A
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 6.22mm
- Brand:
- onsemi/Fairchild
- Series
- MegaFET
Цена по запросу
(от 138,31 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 50В, 16А, 60Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | MOSFET |
| Width | 6.22mm |
| Brand: | onsemi/Fairchild |
| Series | MegaFET |
| Series: | RFD16N05LSM |
| Pin Count | 3 |
| Fall Time: | 14 ns |
| Rise Time: | 30 ns |
| Вес, г | 0.33 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Part # Aliases: | RFD16N05LSM9A_NL |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 80 nC |
| Структура | Power MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 60 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 60 W |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 14 ns |
| Maximum Drain Source Voltage | 50 V |
| Typical Turn-Off Delay Time: | 42 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 16 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 47 mΩ |
| Maximum Continuous Drain Current | 16 A |
| Rds On - Drain-Source Resistance: | 47 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 60 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |