RFD14N05SM9A, MOSFETs TO-252
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004835929
- Артикул
- RFD14N05SM9A
- Бренд
- ON Semiconductor***
- Width
- 6.22mm
- Brand:
- onsemi/Fairchild
- Series:
- RFD14N05SM9A
- Pin Count
- 3
Цена по запросу
(от 115,91 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 50В, 14А, 48Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 6.22mm |
| Brand: | onsemi/Fairchild |
| Series: | RFD14N05SM9A |
| Pin Count | 3 |
| Fall Time: | 17 ns |
| Rise Time: | 26 ns |
| Вес, г | 0.33 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Корпус | TO-252 |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3(TO-252-3) |
| Part # Aliases: | RFD14N05SM9A_NL |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 48 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 48 W |
| Typical Gate Charge @ Vgs | 40 nC @ 20 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 14 ns |
| Maximum Drain Source Voltage | 50 V |
| Typical Turn-Off Delay Time: | 45 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 14 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Continuous Drain Current | 14 A |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | - |
| Максимальный ток сток-исток при 25 С Iси макс..А | 9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 48 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |