RFD14N05LSM9A, MOSFETs Power MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060424462
- Артикул
- RFD14N05LSM9A
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
- Width
- 6.22 mm
Цена по запросу
(от 99,22 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Полевые транзисторы (FET) в режиме усиления производятся с использованием запатентованной компанией Fairchild теxнологии DMOS с высокой плотностью ячеек.
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Width | 6.22 mm |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Series | RFD14N05LSM |
| Fall Time | 16 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 24 ns |
| Technology | Si |
| Вес, г | 1 |
| Unit Weight | 0.009184 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | DPAK(TO-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Part # Aliases | RFD14N05LSM9A_NL |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Number of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 48 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 48 W |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 13 ns |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 42 ns |
| Maximum Drain Source Voltage | 50 V |
| Id - Continuous Drain Current | 14 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Continuous Drain Current | 14 A |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Vds - Drain-Source Breakdown Voltage | 50 V |