RF4L055GNTCR, 60V 5.5A 43mOhm@5.5A,10V 2W 2.7V@1mA 1 N-channel MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8069770276
- Артикул
- RF4L055GNTCR
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 21 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 17 ns
Цена по запросу
(от 68 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 21 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 17 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | HUML2020L-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | RF4L055GN |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 7.8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9.2 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 5.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 43 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |