N-Channel MOSFET, 90 A, 80 V, 3-Pin TO-220AB PSMN8R7-80PS,127
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- Код товара
- 8042780280
- Артикул
- PSMN8R7-80PS,127
- Бренд
- Nexperia B.V.
- Case
- SOT78, TO220AB
- Width
- 4.7mm
- Brand:
- Nexperia
- Mounting
- THT
Цена по запросу
(от 630 ₽)
Минимальный заказ: 4 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | SOT78, TO220AB |
| Width | 4.7mm |
| Brand: | Nexperia |
| Mounting | THT |
| Pin Count | 3 |
| Packaging: | Tube |
| Вес, г | 0.75 |
| Gate charge | 52nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | NEXPERIA |
| Package Type | TO-220AB |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-220AB |
| Channel Mode: | Enhancement |
| Drain current | 90A |
| Manufacturer: | Nexperia |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | 934064001127 |
| Power dissipation | 170W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 52 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 7.5mΩ |
| Transistor Material | Si |
| Drain-source voltage | 80V |
| Pulsed drain current | 361A |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 170 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 170 W |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 80 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 90 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2.3V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 14 mΩ |
| Maximum Continuous Drain Current | 90 A |
| Rds On - Drain-Source Resistance: | 8.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Максимальное напряжение сток-исток Uси,В | 80 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 90 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 170 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |