PSMN5R8-40YS,115, Транзистор: N-MOSFET; полевой; 40В; 90А; Idm: 360А; 89Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066096709
- Артикул
- PSMN5R8-40YS,115
- Бренд
- Nexperia B.V.
- Width
- 4.1mm
- Brand:
- Nexperia
- Pin Count
- 4
- Вес, г
- 1
Цена по запросу
(от 347 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Width | 4.1mm |
| Brand: | Nexperia |
| Pin Count | 4 |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | LFPAK, SOT-669 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-669-5 |
| Part # Aliases: | 934064147115 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 28.8 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 89 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 89 W |
| Typical Gate Charge @ Vgs | 28.8 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 90 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 7.7 mΩ |
| Maximum Continuous Drain Current | 90 A |
| Rds On - Drain-Source Resistance: | 5.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |