PSMN4R5-40BS,118, MOSFETs PSMN4R5-40BS/SOT404/D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8009162991
- Артикул
- PSMN4R5-40BS,118
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Width
- 11mm
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 187,60 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 40 В 100 А (Tc) 148 Вт (Tc) для поверxностного монтажа D2PAK
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Width | 11mm |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| REACH Status | REACH Unaffected |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, DВІPak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Структура | MOSFET |
| Base Product Number | PSMN4R5 -> |
| Transistor Material | Si |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| Особенности | - |
| Power Dissipation (Max) | 148W (Tc) |
| Supplier Device Package | D2PAK |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 148 W |
| Typical Gate Charge @ Vgs | 42.3 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 42.3nC @ 10V |
| Maximum Drain Source Voltage | 40 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 40V |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 6.5 mΩ |
| Maximum Continuous Drain Current | 100 A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds | 2683pF @ 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25В°C | 100A (Tc) |
| Максимальная рассеиваемая мощность Pси макс..Вт | 148 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |