PSMN2R0-30YLE,115, Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048412180
- Артикул
- PSMN2R0-30YLE,115
- Бренд
- Nexperia B.V.
- RoHS
- Details
- Brand
- Nexperia
- Brand:
- Nexperia
- Fall Time
- 29.5 ns
Цена по запросу
(от 185,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N-канальный, 30 В, 100 А, LFPAK; Полярность транзистора: N-канальный; Постоянный ток стока Id: 100 А; Напряжение источника стока Vds: 30 В; Сопротивление включения Rds(on): 0,0017 Ом; Тестовое напряжение Rds(on) Vgs:10 В; Пороговое напряжение Vgs:1,7 В; Po
Технические параметры
| RoHS | Details |
| Brand | Nexperia |
| Brand: | Nexperia |
| Fall Time | 29.5 ns |
| Packaging | Reel |
| Rise Time | 55.7 ns |
| Technology | Si |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Nexperia |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Nexperia |
| Package/Case: | SOT-669-5 |
| Product Type: | MOSFETs |
| Mounting Style | SMD/SMT |
| Package / Case | LFPAK56-5 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934066896115 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 87 nC |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 87 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1500 |
| Factory Pack Quantity: | 1500 |
| Pd - Power Dissipation | 272 W |
| Pd - Power Dissipation: | 272 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 32.7 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 41.5 ns |
| Id - Continuous Drain Current | 100 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| Rds On - Drain-Source Resistance: | 1.7 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 1.7 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |