PSMN2R0-30YLDX, Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8051400006
- Артикул
- PSMN2R0-30YLDX
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Fall Time:
- 19 ns
- Rise Time:
- 31 ns
- Вес, г
- 1
Цена по запросу
(от 145 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Nexperia |
| Fall Time: | 19 ns |
| Rise Time: | 31 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-669-5 |
| Part # Aliases: | 934067964115 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 46 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 142 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 19 ns |
| Typical Turn-Off Delay Time: | 24 ns |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |