PSMN1R4-40YLDX, Транзистор: N-MOSFET; полевой; 40В; 240А; Idm: 1201А; 238Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070073293
- Артикул
- PSMN1R4-40YLDX
- Бренд
- Nexperia B.V.
- Type
- N Channel
- Brand:
- Nexperia
- Fall Time:
- 30 ns
- Rise Time:
- 49 ns
Цена по запросу
(от 250 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
40 В 100 А 1.4mOhm@10V,25238 Вт 2.2V@1mA N-канальные МОП-транзисторы SOT-669 соответствуют требованиям ROHS
Технические параметры
| Type | N Channel |
| Brand: | Nexperia |
| Fall Time: | 30 ns |
| Rise Time: | 49 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Package/Case: | SOT-669-5 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934068724115 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 96 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Factory Pack Quantity: | 1500 |
| Power Dissipation (Pd) | 238W |
| Pd - Power Dissipation: | 238 W |
| Total Gate Charge (Qg@Vgs) | 96nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 39 ns |
| Input Capacitance (Ciss@Vds) | 6.661nF@20V |
| Typical Turn-Off Delay Time: | 47 ns |
| Continuous Drain Current (Id) | 100A |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 1.4 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.05 V |