PSMN1R2-25YLC,115, Транзистор: N-MOSFET; полевой; 25В; 100А; Idm: 1133А; 179Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025166128
- Артикул
- PSMN1R2-25YLC,115
- Бренд
- Nexperia B.V.
- Tab
- Tab
- PPAP
- No
- Width
- 4.1mm
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 170 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 25V 100A 5-контактный (4+вкладки) LFPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 4.1mm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 2.5 |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | LFPAK, SOT-669 |
| Configuration | Single Triple Source |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | LFPAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | NextPower |
| Структура | MOSFET |
| Transistor Material | Si |
| Standard Package Name | FPAK |
| Typical Fall Time (ns) | 29 |
| Typical Rise Time (ns) | 42 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 179 W |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 25 V |
| Maximum Gate Resistance (Ohm) | 2 |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1.95V |
| Maximum Power Dissipation (mW) | 179000 |
| Minimum Gate Threshold Voltage | 1.05V |
| Typical Gate Charge @ 10V (nC) | 66|65 |
| Typical Gate Charge @ Vgs (nC) | 65@10V|31@4.5V|66@10V |
| Maximum Drain Source Resistance | 1.7 mΩ |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Output Capacitance (pF) | 994 |
| Typical Turn-On Delay Time (ns) | 32 |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Gate Plateau Voltage (V) | 2.5 |
| Typical Turn-Off Delay Time (ns) | 60 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 8.3 |
| Maximum Gate Threshold Voltage (V) | 1.95 |
| Minimum Gate Threshold Voltage (V) | 1.05 |
| Typical Gate Threshold Voltage (V) | 1.45 |
| Typical Gate to Source Charge (nC) | 9.7 |
| Typical Reverse Recovery Time (ns) | 41 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 100 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 4173@12V |
| Typical Reverse Recovery Charge (nC) | 36 |
| Maximum Drain Source Resistance (mOhm) | 1.3@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1133 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 347@12V |
| Пороговое напряжение на затворе | 1.95V@1mA |
| Максимальное напряжение сток-исток Uси,В | 25 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 179 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1.55mΩ@10V, 25A |