PSMN102-200Y,115, MOSFETs PSMN102-200Y/SOT669/LFPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8009090273
- Артикул
- PSMN102-200Y,115
- Бренд
- Nexperia B.V.
- Tab
- Tab
- PPAP
- No
- Brand:
- Nexperia
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 144,17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 200 В 21,5 А, 5-контактный (4+ вкладки), LFPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Nexperia |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Вес, г | 0.09 |
| PCB changed | 4 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Triple Source |
| Manufacturer: | Nexperia |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-669-5 |
| Part # Aliases: | 934061323115 |
| Product Category | Power MOSFET |
| Supplier Package | LFPAK |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 30.7 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Typical Fall Time (ns) | 28 |
| Typical Rise Time (ns) | 29.5 |
| Особенности | - |
| Pd - Power Dissipation: | 113 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 21.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 113000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 30.7 |
| Typical Gate Charge @ Vgs (nC) | 30.7@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 14.2 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Rds On - Drain-Source Resistance: | 102 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 21.5 |
| Typical Input Capacitance @ Vds (pF) | 1568@30V |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Drain Source Resistance (mOhm) | 102@10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 113 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |