PSMN0R9-25YLDX, MOSFETs PSMN0R9-25YLD/ SOT669/LFPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006232879
- Артикул
- PSMN0R9-25YLDX
- Бренд
- Nexperia B.V.
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 195,31 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 25V 300A 5-контактный (4+вкладки) LFPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Вес, г | 0.09 |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Triple Source |
| Product Category | Power MOSFET |
| Supplier Package | LFPAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | NextPowerS3 |
| Структура | N-Channel |
| Typical Fall Time (ns) | 27.9 |
| Typical Rise Time (ns) | 42 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 238000 |
| Typical Gate Charge @ 10V (nC) | 89.8 |
| Typical Gate Charge @ Vgs (nC) | 89.8@10V|41.5@4.5V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 37.9 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 39.2 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 300 |
| Typical Input Capacitance @ Vds (pF) | 6721@12V |
| Maximum Drain Source Resistance (mOhm) | 0.85@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 418@12V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 25 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 300 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |