PSMN027-100PS,127, Транзистор: N-MOSFET; полевой; 100В; 37А; Idm: 148А; 103Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026700700
- Артикул
- PSMN027-100PS,127
- Бренд
- Nexperia B.V.
- Tab
- Tab
- PPAP
- No
- Brand:
- Nexperia
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 440 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET; полевой; 100В; 37А; Idm: 148А; 103Вт
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Nexperia |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Rail |
| Pin Count | 3 |
| Automotive | No |
| Packaging: | Tube |
| Вес, г | 2 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Nexperia |
| Product Type: | MOSFET |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | 934064326127 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 30 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 8.9 |
| Typical Rise Time (ns) | 11.4 |
| Особенности | - |
| Pd - Power Dissipation: | 103 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 37 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 103000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 30|24 |
| Typical Gate Charge @ Vgs (nC) | 30@10V|24@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 14.4 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 29.6 |
| Rds On - Drain-Source Resistance: | 26.8 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 37 |
| Typical Input Capacitance @ Vds (pF) | 1624@50V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 26.8@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 100 V |
| Максимальный ток сток-исток при 25 С Iси макс..А | 37 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 103 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 26.8 mOhms |