PN2907ABU, Bipolar (BJT) Single Transistor, PNP, 60 V, 800 mA, 625 mW, TO-92, Through Hole
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8333618563
- Артикул
- PN2907ABU
- Бренд
- ON Semiconductor***
- PPAP
- No
- RoHS
- Details
- Type
- PNP
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 32 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ТРАНЗИСТОР, БИПОЛЯРНЫЙ, PNP, -60 В, TO-92; Полярность транзистора: PNP; Напряжение коллектор-эмиттер V(br)ceo: -60 В; Частота переxода ft: 200 МГц; Рассеиваемая мощность Pd: 625 МВт; Ток коллектора постоянного тока: -800 мА; Коэффициент усиления по постоянному току hFE:50hFE; T
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | PNP |
| Brand | ON Semiconductor/Fairchild |
| Width | 3.93 mm |
| Height | 4.7 mm |
| Length | 4.7 mm |
| Series | PN2907A |
| Mounting | Through Hole |
| Packaging | Bulk |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 0.18 |
| PCB changed | 3 |
| Part Status | Active |
| Unit Weight | 0.006314 oz |
| Manufacturer | ON Semiconductor |
| Корпус | TO-92 |
| Configuration | Single |
| Package Width | 4.19(Max)mm |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3L |
| Package Length | 5.2(Max)mm |
| Part # Aliases | PN2907ABU_NL |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | TO-92 |
| Структура | pnp |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 1000 |
| Standard Package Name | TO |
| Pd - Power Dissipation | 625 mW |
| DC Current Gain hFE Max | 300 |
| Minimum DC Current Gain | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V |
| Gain Bandwidth Product fT | 200 MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 60 V |
| Continuous Collector Current | 0.8 A |
| Maximum DC Collector Current | 0.8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation (mW) | 625 |
| Maximum Base-Emitter Voltage (V) | 5 |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Collector-Base Voltage (V) | 60 |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 20 |
| Maximum Base-Emitter Saturation Voltage (V) | 1.3@15mA@150mA|2.6@50mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@15mA@150mA|1.6@50mA@500mA |