PN2222ATA, Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 625 mW, TO-92, Through Hole
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8846789365
- Артикул
- PN2222ATA
- Бренд
- ON Semiconductor***
- Case
- TO92
- PPAP
- No
- Type
- NPN
- EU RoHS
- Compliant
Цена по запросу
(от 32 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 40V 1A 625 МВт с 3-контактным разъемом TO-92 для подключения вентилятора
Технические параметры
| Case | TO92 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Fan-Fold |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 0.5 |
| PCB changed | 3 |
| Part Status | Active |
| Manufacturer | ONSEMI |
| Package Type | TO-92 |
| Polarisation | bipolar |
| Корпус | TO-92 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Kind of package | Ammo Pack |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | TO-92 |
| Collector current | 1A |
| Power dissipation | 0.625W |
| Type of transistor | NPN |
| Структура | npn |
| Standard Package Name | TO-92 |
| Collector Current (Ic) | 1A |
| Power Dissipation (Pd) | 625mW |
| Transistor Configuration | Single |
| Collector-emitter voltage | 40V |
| Maximum Power Dissipation | 625 mW |
| Transition Frequency (fT) | 300MHz |
| Maximum Operating Frequency | 300 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Maximum DC Collector Current | 1 A |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 75 V |
| Maximum Power Dissipation (mW) | 625 |
| Collector Cut-Off Current (Icbo) | 10nA |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum Collector Base Voltage (V) | 75 |
| Maximum Transition Frequency (MHz) | 300(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (nA) | 10 |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Maximum Base Emitter Saturation Voltage (V) | 1.2 15mA 150mA|2 50mA 500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 15mA 150mA|1 50mA 500mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@50mA, 500mA |
| Максимально допустимый ток к ( Iк макс.А) | 1 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 40 |