PMZ370UNEYL, 30V 900mA 1 N-Channel DFN-3(1x0.6) Single FETs, MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8050086135
- Артикул
- PMZ370UNEYL
- Бренд
- Nexperia B.V.
- Type:
- Trench MOSFET
- Brand:
- Nexperia
- Product:
- MOSFETs
- Fall Time:
- 27 ns
Цена по запросу
(от 51,58 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | Trench MOSFET |
| Brand: | Nexperia |
| Product: | MOSFETs |
| Fall Time: | 27 ns |
| Rise Time: | 9 ns |
| Вес, г | 0.02 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Package/Case: | DFN-1006-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934068439315 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 770 pC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 10000 |
| Pd - Power Dissipation: | 360 mW |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 54 ns |
| Id - Continuous Drain Current: | 900 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1580 mS |
| Rds On - Drain-Source Resistance: | 370 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 770 mV |