PMXB350UPEZ, Trans MOSFET P-CH 20V 1.2A 3-Pin DFN-D EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8038867203
- Артикул
- PMXB350UPEZ
- Бренд
- NXP Semiconductor
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 31 ₽)
Минимальный заказ: 2238 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 1.2A с 3-контактным разъемом DFN-D EP T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1 |
| Package Length | 1.1 |
| Product Category | Small Signal |
| Supplier Package | DFN-D EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 9 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 930 |
| Typical Gate Charge @ Vgs (nC) | 1.25@4.5V |
| Maximum Gate Source Voltage (V) | 8 |
| Typical Turn-On Delay Time (ns) | 3 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.2 |
| Typical Input Capacitance @ Vds (pF) | 116@10V |
| Maximum Drain Source Resistance (mOhm) | 447@4.5V |
| Maximum Gate Source Leakage Current (nA) | 10000 |