PMV45EN2R, Транзистор N-MOSFET, полевой, 30В, 2,6А, 1115мВт, SOT23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8056503510
- Артикул
- PMV45EN2R
- Бренд
- Nexperia B.V.
- Width
- 1.4mm
- RDS-on
- 42@10V mOhm
- Series
- PMV45EN2
- Mounting
- Surface Mount
Цена по запросу
(от 14 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Width | 1.4mm |
| RDS-on | 42@10V mOhm |
| Series | PMV45EN2 |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Вес, г | 0.05 |
| Lead Finish | Tin |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Typical Fall Time | 2 ns |
| Typical Rise Time | 12 ns |
| Forward Diode Voltage | 1.2V |
| Operating Temperature | -55 to 150 °C |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 5 W |
| Typical Gate Charge @ Vgs | 3.6 nC @ 10 V |
| Typical Turn-On Delay Time | 3 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 11 ns |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | 42 mΩ |
| Maximum Continuous Drain Current | 5.1 A |