PMV37EN2R, Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001245809
- Артикул
- PMV37EN2R
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tape & Reel(TR)
Цена по запросу
(от 37 ₽)
Минимальный заказ: 2503 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Nexperia PMV37EN - Малосигнальный полевой транзистор, 4,5А, 30 В, N-канальный MOSFET, TO-236AB
Технические параметры
| Brand: | Nexperia |
| Series | - |
| FET Type | N-Channel |
| Packaging | Tape & Reel(TR) |
| Vgs (Max) | В±20V |
| Fall Time: | 2 ns |
| Rise Time: | 12 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Nexperia USA Inc. |
| Subcategory: | Transistors |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934068492215 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 3.6 nC |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 4.5A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 1.115 W |
| Power Dissipation (Max) | 510mW(Ta), 5W(Tc) |
| Supplier Device Package | TO-236AB |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 3 ns |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Typical Turn-Off Delay Time: | 11 ns |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 5.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 209pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 4.5A(Ta) |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |