PMV27UPER, Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001245483
- Артикул
- PMV27UPER
- Бренд
- Nexperia B.V.
- PPAP
- No
- Brand:
- Nexperia
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 71 ₽)
Минимальный заказ: 1316 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 4,5A с 3-контактным разъемом SOT-23 T/R
Технические параметры
| PPAP | No |
| Brand: | Nexperia |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 39 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 30 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Nexperia |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934068498215 |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Power Dissipation | 490мВт |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 14.7 nC |
| Process Technology | TMOS |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 39 |
| Typical Rise Time (ns) | 30 |
| Особенности | - |
| Pd - Power Dissipation: | 980 mW |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 83 ns |
| Id - Continuous Drain Current: | 5.6 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 980 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 14.7@4.5V |
| Maximum Gate Source Voltage (V) | 8 |
| Typical Output Capacitance (pF) | 208 |
| Typical Turn-On Delay Time (ns) | 11 |
| Drain Source On State Resistance | 0.027Ом |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.5 |
| Typical Turn-Off Delay Time (ns) | 83 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Gate to Drain Charge (nC) | 2.5 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Minimum Gate Threshold Voltage (V) | 0.45 |
| Typical Gate Threshold Voltage (V) | 0.7 |
| Typical Gate to Source Charge (nC) | 2.6 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Maximum Continuous Drain Current (A) | 4.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1820@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 32@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 450 mV |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Непрерывный Ток Стока | 4.5А |
| Рассеиваемая Мощность | 490мВт |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 18 |
| Полярность Транзистора | P Канал |
| Пороговое Напряжение Vgs | 700мВ |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 27@4.5V|38@2.5V|50@1.8V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.98 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 146@10V |
| Напряжение Измерения Rds(on) | 4.5В |
| Напряжение Истока-стока Vds | 20В |
| Стиль Корпуса Транзистора | TO-236AB |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 4.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 255 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальная Рабочая Температура | 150 C |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Сопротивление во Включенном Состоянии Rds(on) | 0.027Ом |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4.5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.98 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |