PMV250EPEAR, Транзистор P-MOSFET, полевой, -40В, -1А, 890мВт, SOT23
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- Код товара
- 8048524699
- Артикул
- PMV250EPEAR
- Бренд
- Nexperia B.V.
- RoHS
- Details
- Type
- Trench MOSFET
- Brand
- Nexperia
- Width
- 1.4mm
Цена по запросу
(от 17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -40В, -1А, 890мВт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| RoHS | Details |
| Type | Trench MOSFET |
| Brand | Nexperia |
| Width | 1.4mm |
| Height | 1.1 mm |
| Length | 3 mm |
| Series | PMV250EPEA |
| Product | MOSFET |
| Fall Time | 14 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 6 ns |
| Technology | Si |
| Вес, г | 1 |
| Unit Weight | 0.000282 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Nexperia |
| Package Type | SOT-23 |
| Configuration | Single with ESD Protection Diode |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Product Category | MOSFET |
| Qg - Gate Charge | 4.7 nC |
| Number of Channels | 1 Channel |
| Automotive Standard | AEC-Q101 |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 3000 |
| Forward Diode Voltage | 1.2V |
| Pd - Power Dissipation | 480 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 6.25 W |
| Typical Gate Charge @ Vgs | 4.7 nC @-10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 4 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 26 ns |
| Maximum Drain Source Voltage | 40 V |
| Id - Continuous Drain Current | -1.5 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Transconductance - Min | 4.5 S |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | 240 mΩ |
| Maximum Continuous Drain Current | 1.5 A |
| Rds On - Drain-Source Resistance | 400 mOhms |
| Vds - Drain-Source Breakdown Voltage | -40 V |
| Vgs th - Gate-Source Threshold Voltage | -1 V |